Preparation of Nc-Si/A-Sio2 Multi-Layer Thin Film Specimens for TEM Cross-Section Observation by Cryo Argon Ion Slicing

Silicon multi-layered thin films are subject of the recent research to play a key role in solar cell technology. The morphological analyses of the textured nc-Si/a-SiO2 multilayer semiconducting thin films are significant for the fabrication of solar cells. Besides the intrinsic properties, the structural properties have a great impact on the performance based on the quality of the interface between the layers. Also, the reproducibility is important for the commercial production and textured thin layer with high quality is needed for high efficiency. Hence, the analyses of size, structure and morphology of the thin layers are important to fulfil the above said requirements. Recently, large efforts have been put on the manufacturing of thin films to improve the efficiency of amorphous and microcrystalline silicon based solar cells [1-6]. The main intention on the development of such materials in solar industry (3rd generation of solar cells) is to reduce the usage of materials and deposition costs, and also to increase the efficiency of the photovoltaic devices. The major issue to be solved is to shift the absorption in Si nanostructures to higher energies compared to the bulk material utilizing the quantum confinement effect, while ensuring an efficient charge carrier transport. The quantum confinement can be well controlled by the size of nanostructures and by the properties of the barrier material (SiO2) [7-9]. Hence, the nc-Si/a-SiO2 multi-layers of thin film were preferred for the investigation.